Towards Multi Millisecond Spatially Homogeneous Carrier Lifetimes from Epitaxial Silicon Wafers Grown on Porous Silicon
| Autor: | Kajari-Schröder, S., Gemmel, C., Hensen, J., Brendel, R. |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20172017-2bo.3.5 |
| Popis: | 33rd European Photovoltaic Solar Energy Conference and Exhibition; 339-342 Kerfless wafering is receiving renewed attention internationally due to a) the need of PV industry to realize cost savings and to enhance resource efficiency along the value chain and b) due to the recent step by step demonstrations of key components for the implementation of kerfless wafers in mainstream photovoltaics: high electronic quality of the kerfless wafers, suitability for existing machinery (drop-in replacement), and high solar cell efficiencies. We use the porous silicon (PSI) process for the fabrication of kerfless monocrystalline silicon wafers. Here, we analyze the PSI wafer quality by analyzing the injectiondependent carrier lifetimes of the samples with infrared lifetime mappings and photo conductance decay measurements. We evaluate the reorganization of the PSI by scanning electron microscopy (SEM). We successfully lift-off 7 out of 7 epitaxial PSI wafers on an area of 10 x 10 cm2 pseudosquare. The effective lifetimes of these layers range from 836 to 1022 μs at an injection level of n=1015 cm-3 and the lifetime is spatially homogeneous on the wafer area. |
| Databáze: | OpenAIRE |
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