Hydrometallurgical Purification of Metallurgical Grade Silicon with Hydrogen Peroxide in Hydrofluoric Acid
| Autor: | Pengfei Xing, Liuqing Huang, Xuetao Luo, Huixian Lai, Chuanhai Gan, Jintang Li, Xiong Huaping |
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| Rok vydání: | 2016 |
| Předmět: |
inorganic chemicals
Materials science Silicon General Chemical Engineering Inorganic chemistry chemistry.chemical_element 02 engineering and technology complex mixtures Industrial and Manufacturing Engineering 020501 mining & metallurgy chemistry.chemical_compound Hydrofluoric acid Etching (microfabrication) Oxidizing agent Hydrogen peroxide Lixiviant Metallurgy technology industry and agriculture General Chemistry equipment and supplies 021001 nanoscience & nanotechnology Isotropic etching 0205 materials engineering chemistry Leaching (metallurgy) 0210 nano-technology |
| Zdroj: | Industrial & Engineering Chemistry Research. 56:311-318 |
| ISSN: | 1520-5045 0888-5885 |
| DOI: | 10.1021/acs.iecr.6b02245 |
| Popis: | The effect of adding hydrogen peroxide (H2O2) as an oxidizing agent on purifying metallurgical grade silicon (MG-Si) by leaching with hydrofluoric acid (HF) was studied as a function of leaching temperature, particle size, leaching duration, and concentration of leaching agents. It was found that the extraction capacity for metallic impurities could be significantly enhanced with introduction of H2O2 into HF lixiviant with little dependence on HF concentration. Upon leaching with 1 mol·L–1 HF and 2 mol·L–1 H2O2 for only 0.25 h at 55 °C, the MG-Si purity could be upgraded from 99.74% to 99.96%, to 99.99% with further prolonging of leaching duration. The sensitivity sequences of precipitates to each etchant were obtained through revealing the microstructural evolution of MG-Si before and after etching. With the help of Raman spectrometry and transmission electron microscopy, the chemical etching mechanism is discussed. |
| Databáze: | OpenAIRE |
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