Morphology and Luminescence of p-Doped Porous Silicon
| Autor: | Da Chang, S. Rogaschewski, E. Zur Muhlen, H. Niehus |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
inorganic chemicals
Materials science Photoluminescence Silicon Scanning electron microscope Doping technology industry and agriculture chemistry.chemical_element Nanotechnology Condensed Matter Physics Porous silicon Electronic Optical and Magnetic Materials chemistry Etching (microfabrication) Wafer Composite material Luminescence |
| Zdroj: | physica status solidi (b). 198:673-686 |
| ISSN: | 1521-3951 0370-1972 |
| DOI: | 10.1002/pssb.2221980213 |
| Popis: | Porous silicon (PS) layers were created with different etching conditions on boron doped silicon wafers. Morphologies of the PS layers and their surfaces were investigated with atomic force and scanning electron microscopy. Low current densities during anodization led to homogeneous layers, while high current densities resulted in strain induced mechanical instabilities. The strain leads to a peeling off of the layer for micro- or mesoporous silicon. In contrast, in macroporous films strain can be relieved laterally leading to the local formation of channels. Luminescence properties of the samples are investigated and related to the PS morphology. |
| Databáze: | OpenAIRE |
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