Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation
| Autor: | Enrique San Andrés, P. C. Feijoo, M. A. Pampillon |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Silicon Gadolinium Analytical chemistry chemistry.chemical_element Equivalent oxide thickness Dielectric Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Sputtering Electrical and Electronic Engineering High-resolution transmission electron microscopy Leakage (electronics) High-κ dielectric |
| Zdroj: | Microelectronic Engineering. 109:236-239 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2013.03.094 |
| Popis: | Graphical abstractDisplay Omitted Gd2O3 obtained by high pressure sputtering from Gd target with plasma oxidation on Si.We have obtained a high k dielectric with good electrical properties.Gate conductances and gate leakage currents are low.Almost negligible hysteresis and frequency dispersion are observed. In this work, we characterized gadolinium oxide films deposited on silicon by high pressure sputtering with a two-step process: first, we sputtered metallic gadolinium in an argon atmosphere and then, we performed an in situ plasma oxidation of the metallic layer previously deposited. By means of high resolution transmission electron microscopy, we can detect the oxidation degree of the metallic film. Under optimized deposition conditions, fully oxidized Gd2O3 films are obtained. In addition, the capacitance and conductance as a function of gate voltage of Pt gated metal-insulator-semiconductor capacitors confirm stable dielectric behavior of the fully oxidized films. The devices show low gate leakage currents (~10-5A/cm2 at 1V for 2.2nm of equivalent oxide thickness), low interface trap density and an almost negligible hysteresis and frequency dispersion. |
| Databáze: | OpenAIRE |
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