Passivation study of the amorphous-crystalline silicon interface formed using DC saddle-field glow discharge
| Autor: | Barzin Bahardoust, Stefan Zukotynski, Adel B. Gougam, Davit Yeghikyan, Keith Leong, Nazir P. Kherani, Tome Kosteski, Alongkarn Chutinan |
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| Rok vydání: | 2010 |
| Předmět: |
Glow discharge
Passivation Chemistry Annealing (metallurgy) Analytical chemistry Charge density Heterojunction Surfaces and Interfaces Carrier lifetime Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Materials Chemistry Crystalline silicon Electrical and Electronic Engineering |
| Zdroj: | physica status solidi (a). 207:539-543 |
| ISSN: | 1862-6319 1862-6300 |
| DOI: | 10.1002/pssa.200982803 |
| Popis: | The DC saddle-field (DCSF) glow discharge method was used to deposit intrinsic a-Si:H onto c-Si to passivate the c-Si surface. The effective minority carrier lifetime in the heterostructures as a function of the excess minority carrier density in the c-Si wafers was measured. The results were then analyzed in the context of recombination associated with interface defect states using three known recombination models. The defect density and the charge density at the interface are inferred. In addition subsequent annealing of the samples was studied. It is shown that for our intrinsic a-Si:H samples improvements in surface passivation are directly correlated with the reduction of interface defects and not the reduction of minority carrier concentration at the interface due to electric field. We have achieved excellent surface passivation with effective carrier lifetime >4 ms for an intrinsic a-Si:H sample deposited at a process temperature of 200 °C and thickness of about 30 nm. It is also demonstrated that subsequent annealing, at 240 °C, of the samples which were prepared at process temperatures |
| Databáze: | OpenAIRE |
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