Critical voltage growth rate when initiating the ultrafast impact ionization front in a diode structure

Autor:	A. M. Minarskii, P. B. Rodin
Rok vydání:	2000
Předmět:	Impact ionization Drift velocity Chemistry Magnet Critical voltage Front (oceanography) Growth rate Atomic physics Condensed Matter Physics Ultrashort pulse Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Diode
Zdroj:	Semiconductors. 34:665-667
ISSN:	1090-6479 1063-7826
DOI:	10.1134/1.1188051
Popis:	The threshold of the voltage-rise rate was estimated; this threshold should be achieved in a reversely biased diode structure to excite an impact ionization front propagating with a velocity higher than saturated carrier drift velocities.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8dfb65b8ee00be76d6067b20284cab69 https://doi.org/10.1134/1.1188051 Zobrazit plný text záznamu Plný text ve formátu PDF