Light emission polarization properties of strained (11$ \bar 2 $2) semipolar InGaN quantum well
| Autor: | Hung-Hsun Huang, Yuh-Renn Wu |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Materials science
Condensed matter physics business.industry chemistry.chemical_element Semiconductor device Condensed Matter Physics Polarization (waves) law.invention Schrödinger equation symbols.namesake chemistry law symbols Optoelectronics Light emission Electronic band structure business Quantum well Indium Light-emitting diode |
| Zdroj: | physica status solidi c. 7:1859-1862 |
| ISSN: | 1610-1642 1862-6351 |
| DOI: | 10.1002/pssc.201083456 |
| Popis: | We studied the optical characteristics of a (112) semipolar InGaN/GaN quantum well with different indium compositions, quantum well widths, and injection carrier densities. The self-consistent Poisson and 6×6 k · p Schrodinger solver has been applied to study the band structure in semipolar InGaN quantum well light emitting diodes. Our work shows an interesting switching behavior of the polarization direction when the indium composition is larger than 40%. The best configuration for the maximized polarization condition has been studied in this paper. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text