Waveguiding properties of heterolasers based on InGaAs/GaAs strained quantum-well structures and characteristics of their gain spectra
| Autor: | V P Konyaev, V I Shveikin, E V Arzhanov, O M Nikitina, Alexandr P Bogatov |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
business.industry Ingaas gaas Physics::Optics Statistical and Nonlinear Physics Radiation Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Atomic and Molecular Physics and Optics Spectral line Electronic Optical and Magnetic Materials law.invention Optics law Radiative transfer Optoelectronics Electrical and Electronic Engineering business Quantum well Leakage (electronics) Common emitter |
| Zdroj: | Quantum Electronics. 24:581-587 |
| ISSN: | 1468-4799 1063-7818 |
| Popis: | An experimental investigation revealed anomalies of the watt—ampere characteristics and modulation of the gain spectra, as well as certain features of the far-field pattern of the radiation emitted by heterolasers based on InGaAs/GaAs strained quantum-well structures. A theoretical analysis showed that the radiative characteristics of such lasers are governed by their waveguiding properties and that these properties depend on the thickness and composition of the emitter layers, and are the results of 'leakage' of the radiation field out of the waveguide. |
| Databáze: | OpenAIRE |
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