Characterization and optimization of porogen-based PECVD deposited extreme low-k materials as a function of UV-cure time
| Autor: | H. Sprey, Nathan Kemeling, David De Roest, Youssef Travaly, Naoto Tsuji, Rudy Caluwaerts, Kiyohiro Matsushita, Shinya Kaneko, Patrick Verdonck, Gerald Beyer, Marc Schaekers |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Analytical chemistry Surfaces and Interfaces General Chemistry Dielectric Condensed Matter Physics Surfaces Coatings and Films Elastic recoil detection symbols.namesake Fourier transform Chemical engineering Plasma-enhanced chemical vapor deposition Materials Chemistry UV curing symbols Deposition (phase transition) Degradation (geology) Process optimization |
| Zdroj: | Surface and Coatings Technology. 201:9264-9268 |
| ISSN: | 0257-8972 |
| Popis: | A promising method to produce low- k films with a dielectric constant, k , less than 2.3, consists in using a porogen-based PECVD process in combination with UV cure for both porogen removal and thermo-mechanical properties enhancement. Aurora® ELK films with a dielectric constant of less than 2.3 and a Young's modulus of 4 GPa were obtained by careful tuning of (1) the porogen to Aurora® X precursor gas flows during deposition and (2) the subsequent UV-cure time. Process optimization is monitored by Fourier Transform InfraRed and Elastic Recoil Detection analyses. Porogen-related groups (i.e. CH 2 ) are removed within the initial period of UV cure inducing thereby the formation of the porous network. However, the structural reorganization of the SiCO:H matrix, which leads to a mechanically stable film, requires a significantly longer time of UV curing for completion. Film overcuring causes the removal of CH 3 groups leading to loss of hydrophobicity, film densification and k -value degradation. The optimized process results in films that show promising properties for future integration schemes. |
| Databáze: | OpenAIRE |
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