Gain Switching of the Broad-Stripe InAs/GaAs Quantum Dot Lasers
| Autor: | Vladislav V. Dudelev, A. S. Shkol'nik, E. D. Cherotchenko, Grigorii S. Sokolovskii, D.A. Livshits |
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| Rok vydání: | 2020 |
| Předmět: |
Facet (geometry)
Materials science Condensed Matter::Other business.industry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Lateral position law.invention Gain-switching Condensed Matter::Materials Science law Quantum dot laser Excited state Optoelectronics Physics::Atomic Physics business |
| Zdroj: | 2020 International Conference Laser Optics (ICLO). |
| DOI: | 10.1109/iclo48556.2020.9285501 |
| Popis: | We study gain switching of the broad-stripe InAs/GaAs quantum dot lasers and show that the ratio of ground and excited states emission varies with the lateral position at the laser facet. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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