Lasing Characteristics of GaN-Based Photonic Quasi-Crystal Surface Emitting Lasers Operated at Higher Order Γ Mode
| Autor: | Kuo-Bin Hong, Chih-Cheng Chen, Shing-Chung Wang, Tien-Chang Lu |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Physics::Optics Gallium nitride Threshold energy Laser Atomic and Molecular Physics and Optics law.invention Gain-switching chemistry.chemical_compound Lattice constant chemistry law Optoelectronics Electrical and Electronic Engineering Photonics business Lasing threshold Photonic crystal |
| Zdroj: | IEEE Journal of Selected Topics in Quantum Electronics. 21:743-748 |
| ISSN: | 1558-4542 1077-260X |
| DOI: | 10.1109/jstqe.2015.2443979 |
| Popis: | In this study, GaN-based photonic quasi-crystal surface emitting lasers (PQCSELs) operated at different Γ band-edge modes were fabricated and investigated. The photonic quasi-crystal patterns were defined by utilizing electron-beam lithography and inductively coupled plasma etching. Distinctive higher order Γ band-edge lasing modes were identified in the GaN PQCSELs. The threshold energy density and lasing wavelength for the S3 band-edge mode were 4.6 mJ/cm2 and 394.2 nm, respectively. The decreasing tendency of the threshold energy of PQCSEL was observed while the designed lasing mode moved from the higher Γ band to the lower Γ band. Numerical results showed that the S3 mode had the lower threshold and the threshold gain would be largely varied by tuning the ratio of air hole radius/lattice constant ( r / a ). Based on calculations and experiments, PQCSELs show the opportunity to realize lower threshold lasers than typical PC laser for specific value of r / a and appropriate higher order band-edge modes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|