Comparison of structural and optical properties in strained GaInAsP MQW structures grown by MOVPE and MOMBE

Autor:	Eberhard Veuhoff, Horst Baumeister, P. Kroner, Othmar Marti, J. Rieger, H. Heinecke
Rok vydání:	2000
Předmět:	Photoluminescence Strain (chemistry) Chemistry business.industry Condensed Matter Physics Epitaxy Inorganic Chemistry Optics Transmission electron microscopy Ultimate tensile strength Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy Thin film business Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 209:424-430
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(99)00584-9
Popis:	The growth parameter dependence of the transition from 2D to 3D growth of GaInAsP multiple quantum well (MQW) structures up to e B =0.5% tensile-strained barriers was examined. Identical MQW structures with e W =1% compressively strained wells were grown by metal organic vapor-phase epitaxy (MOVPE) and metal organic molecular beam epitaxy (MOMBE) and characterized by photoluminescence (PL), X-ray diffraction and transmission electron microscopy. Increasing the tensile barrier strain resulted in deteriorated optical and crystalline properties beyond a critical strain limit, which depends on growth temperature. The deterioration originates from lateral layer thickness and strain modulations. Their density, amplitude and thus their effect on the optical MQW properties are different for both growth methods. High-quality MOMBE-grown MQW structures up to e W =2% compressive well strain and e B =0.5–1% tensile barrier strain could be achieved by inserting thin intermediate layers at each internal interface. The composition of these intermediate layers has a significant effect on MQW material properties.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8db5b860054cc7f6324b7292189968fd https://doi.org/10.1016/s0022-0248(99)00584-9 Zobrazit plný text záznamu Full Text from ScienceDirect