First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length

Autor:	Yun-Yan Chung, Bo-Jhih Chou, Chen-Feng Hsu, Wei-Sheng Yun, Ming-Yang Li, Sheng-Kai Su, Yu-Tsung Liao, Meng-Chien Lee, Guo-Wei Huang, San-Lin Liew, Yun-Yang Shen, Wen-Hao Chang, Chien-Wei Chen, Chi-Chung Kei, Han Wang, H.-S. Philip Wong, T. Y. Lee, Chao-Hsin Chien, Chao-Ching Cheng, Iuliana P. Radu
Rok vydání:	2022
Zdroj:	2022 International Electron Devices Meeting (IEDM).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8daad73d43b097ab7bd8fcdd9a8ca4bd https://doi.org/10.1109/iedm45625.2022.10019563 Zobrazit plný text záznamu