InP dies transferred onto silicon substrate for optical interconnects application
| Autor: | M. Zussy, Ch. Lagahe-Blanchard, Marek Kostrzewa, J-M. Fedeli, B. Aspar, J.C. Roussin, L. Di Cioccio, N. Kernevez, Philippe Regreny |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Silicon business.industry Silicon dioxide Hybrid silicon laser Metals and Alloys chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Electronic engineering Optoelectronics Wafer Electrical and Electronic Engineering Photonics business Instrumentation Layer (electronics) Quantum well |
| Zdroj: | Sensors and Actuators A: Physical. 125:411-414 |
| ISSN: | 0924-4247 |
| Popis: | We bonded quantum well InP dies on a photonic layer transferred on silicon CMOS processed wafer using direct molecular bonding. This approach is suitable for new applications, viz., photonics on silicon, 3D packaging and integrated sensors. The chips are diced from a bulk substrate and bonded directly onto a silicon substrate without any organic nor metallic adhesive layer. A thin silicon dioxide layer can be added on both assembled surfaces to enhance bonding quality. After bonding, the dies can mechanically be thinned down to 20 μm and chemically etched. The InAsP quantum well stack of the InP dies keeps its optoelectronics features and performances after being transferred onto a silicon substrate. |
| Databáze: | OpenAIRE |
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