Hot-Carrier Degradation Estimation of a Silicon-on-Insulator Tunneling FET Using Ambipolar Characteristics
| Autor: | Donghwan Lim, Soo Cheol Kang, Chang Hwan Choi, Byoung Hun Lee, Sang Kyung Lee, Dong-Seon Lee, Seokjin Kang |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Ambipolar diffusion Transistor Oxide Silicon on insulator 01 natural sciences Electronic Optical and Magnetic Materials law.invention Stress (mechanics) chemistry.chemical_compound chemistry law 0103 physical sciences Optoelectronics Degradation (geology) Electrical and Electronic Engineering business Layer (electronics) Quantum tunnelling |
| Zdroj: | IEEE Electron Device Letters. 40:1716-1719 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | The unique degradation behavior of a tunneling field-effect transistor (TFET) under hot-carrier injection (HCI) stress has been previously investigated. However, while the source side (p+/p junction) of degradation (due to HCI stress) has been extensively studied, the drain side (p/n+ junction) has not been investigated yet. Our study revealed that both bulk oxide and interfacial layer degradation occurred at the drain side, while an interfacial layer degradation was dominant at the source side at 300 K. This evidences a unique degradation mechanism of the tunneling FET. |
| Databáze: | OpenAIRE |
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