First demonstration of W-band Tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
| Autor: | Oliver Ambacher, Peter Brückner, Erdin Ture, Mohamed Alsharef, Rudiger Quay, Ralf Granzner, Frank Schwierz |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Power gain Engineering business.industry Amplifier Transistor Electrical engineering 020206 networking & telecommunications Gallium nitride 02 engineering and technology Integrated circuit High-electron-mobility transistor 01 natural sciences law.invention chemistry.chemical_compound W band chemistry law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering business Monolithic microwave integrated circuit |
| Zdroj: | 2017 IEEE MTT-S International Microwave Symposium (IMS). |
| DOI: | 10.1109/mwsym.2017.8058452 |
| Popis: | First-ever realization of a W-band power amplifier (PA) millimeter-wave monolithic integrated circuit (MMIC) utilizing GaN-based Tri-gate high-electron-mobility transistors (HEMTs) is presented in this paper. Superior device- and circuit-level performances over conventional GaN HEMTs are proven to be empowered through implementation of the novel Tri-gate topology which exhibits a 3-dimensional gate profile. The measurements of the fabricated MMIC yield up to 30.6 dBm (1.15 W) of output power in the frequency range of 86–94 GHz with 8% of power-added-efficiency (PAE) and more than 12 dB of transducer power gain. The achieved results demonstrate the promising potential of Tri-gate GaN technology towards high-performance millimeter-wave PA designs. |
| Databáze: | OpenAIRE |
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