Influence of iodine molecule adsorption on electronic properties of porous silicon studied by FTIR and EPR spectroscopy
| Autor: | Liubov A. Osminkina, A. E. Tkachenko, Elizaveta A. Konstantinova, S. A. Kutergin, D. A. Mamichev, A. S. Vorontsov, Alexander V. Pavlikov, Pavel K. Kashkarov, V. Yu. Timoshenko |
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| Rok vydání: | 2007 |
| Předmět: |
inorganic chemicals
Silicon Dopant Doping technology industry and agriculture Analytical chemistry Infrared spectroscopy chemistry.chemical_element equipment and supplies Condensed Matter Physics Porous silicon complex mixtures Acceptor law.invention chemistry law Charge carrier Electron paramagnetic resonance |
| Zdroj: | physica status solidi c. 4:2121-2125 |
| ISSN: | 1610-1642 1862-6351 |
| DOI: | 10.1002/pssc.200674395 |
| Popis: | The infrared absorption and electron paramagnetic resonance spectroscopy are used for studying the effect of adsorption of iodine (I2) molecules, strong acceptors of electrons, on the electronic properties of silicon nanocrystals in micro- and mesoporous silicon layers with different types of doping impurities. It is found that the concentration of free charge carries (holes) in silicon nanocrystals, obtained by electrochemical etching of p-type and n-type silicon wafers, sharply increases in the presence of I2 molecules. At the same time the decrease of the dangling silicon bonds (Pb-centers) concentration is observed. A microscopic model proposed for explaining this effects presumes the formation of donor-acceptor pairs (Pb1+-I2–), and shallow acceptor states on the porous silicon surface which, together with the initial dopant and surface defect states, specify the charge carrier type and concentration in the silicon nanocrystals. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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