InAlN/GaN HEMTs based L-band high-power packaged amplifiers
| Autor: | Dominique Carisetti, Olivier Jardel, Lény Baczkowski, Jean-Claude Jacquet, Maxime Olivier, Sylvain Delage, Raphaël Aubry, Didier Lancereau, Stéphane Piotrowicz, Marie-Antoinette Poisson, Christian Dua |
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| Rok vydání: | 2014 |
| Předmět: | |
| Zdroj: | International Journal of Microwave and Wireless Technologies. 6:565-572 |
| ISSN: | 1759-0795 1759-0787 |
| DOI: | 10.1017/s175907871400004x |
| Popis: | This paper presents power results of L-band packaged hybrid amplifiers using InAlN/GaN/SiC HEMT power dies. The high-power densities achieved both in pulsed and continuous wave (cw) modes confirm the interest of such technology for high-frequency, high-power, and high-temperature operation. We present here record RF power measurements for different versions of amplifiers. Up to 260 W, i.e. 3.6 W/mm, in pulsed (10 µs/10%) conditions, and 105 W, i.e. 2.9 W/mm, in cw conditions were achieved. Such results are made possible thanks to the impressive performances of InAlN/GaN transistors, even when operating at high temperatures. Unit cell transistors deliver output powers of 4.3 W/mm at Vds = 40 V in the cw mode of operation at the frequency of 2 GHz. The transistor process is described here, as well as the amplifiers design and measurements, with a particular focus to the thermal management aspects. |
| Databáze: | OpenAIRE |
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