Low-threshold lasing in a plasmonic laser using nanoplate InGaN/GaN
| Autor: | Tao Tao, Bin Liu, Junjun Xue, Ting Zhi, Zhikuo Tao, Xiaoyan Liu, Jin Wang, Yi Li, Zili Xie |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
business.industry Nanolaser Surface plasmon Physics::Optics Condensed Matter Physics Laser Electronic Optical and Magnetic Materials law.invention Full width at half maximum law Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Ohmic contact Lasing threshold Refractive index Plasmon |
| Zdroj: | Journal of Semiconductors. 42:122803 |
| ISSN: | 2058-6140 1674-4926 |
| DOI: | 10.1088/1674-4926/42/12/122803 |
| Popis: | Plasmonic nanolaser as a new type of ultra-small laser, has gain wide interests due to its breaking diffraction limit of light and fast carrier dynamics characters. Normally, the main problem that need to be solved for plasmonic nanolaser is high loss induced by optical and ohmic losses, which leads to the low quality factor. In this work, InGaN/GaN nanoplate plasmonic nanolaser with large interface area were designed and fabricated, where the overlap between SPs and excitons can be enhanced. The lasing threshold is calculated to be ~6.36 kW/cm2, where the full width at half maximum (FWHM) drops from 27 to 4 nm. And the fast decay time at 502 nm (sharp peak of stimulated lasing) is estimated to be 0.42 ns. Enhanced lasing characters are mainly attributed to the strong confinement of electromagnetic wave in the low refractive index material, which improve the near field coupling between SPs and excitons. Such plasmonic laser should be useful in data storage applications, biological application, light communication, especially for optoelectronic devices integrated into a system on a chip. |
| Databáze: | OpenAIRE |
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