The change of ferroelectric properties of Pt/Pb(Zr,Ti)O3/Pt capacitor due to SiO2 deposition
| Autor: | In Seon Park, Sang-In Lee, Young Bum Koh, Cha Young Yoo, Sang-min Lee, Sejun Oh, Moon Yong Lee, Byueng Hee Kim |
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| Rok vydání: | 1998 |
| Předmět: |
Fabrication
Materials science Analytical chemistry Chemical vapor deposition Dielectric Condensed Matter Physics Ferroelectricity Electron cyclotron resonance Electronic Optical and Magnetic Materials Control and Systems Engineering Materials Chemistry Ceramics and Composites Electrical and Electronic Engineering Polarization (electrochemistry) Layer (electronics) Deposition (law) |
| Zdroj: | Integrated Ferroelectrics. 20:225-239 |
| ISSN: | 1607-8489 1058-4587 |
| DOI: | 10.1080/10584589808238783 |
| Popis: | Degradation of ferroelectric properties of Pt/Pb(Zr,Ti)O3/Pt capacitor by the back-end process of ferroelectric random access memory (FRAM) device fabrication process was studied, particularly by the interlayer dielectric (ILD). The influence of ILD layer on the ferroelectric properties of Pt/Pb(Zr,Ti)O3/Pt capacitor was investigated. The SiO2 film for ILD layer was deposited by two methods; electron cyclotron resonance chemical vapor deposition (ECR CVD) using SiH4/N2O gas and atmospheric pressure thermal CVD using tetra ethyl ortho-silicate (TEOS) and O3(O3-TEOS CVD). The SiO2 deposition changed the ferroelectric properties of Pt/Pb(Zr,Ti)O3/Pt capacitor, varied according to the deposition condition and method. The degradation of ferroelectric property of Pt/Pb(Zr,Ti)O3/Pt capacitor by O3-TEOS SiO2 was less than that of ECR CVD-SiO2. However, both method could make the nonvolatile remanent polarization (NVPr) to be above 10 μC/cm2 at 5 V, which makes those processes valuable as ILD process of F... |
| Databáze: | OpenAIRE |
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