Influence of low-energy proton irradiation on the effective lifetime in the space charge region of silicon n+-p junctions

Autor:	M S Kovalenko, M A Voloshin, L R Grigoryan, V S Volodin, N M Bogatov
Rok vydání:	2021
Předmět:	History Materials science Low energy Proton Depletion region Silicon chemistry TheoryofComputation_ANALYSISOFALGORITHMSANDPROBLEMCOMPLEXITY chemistry.chemical_element Irradiation Atomic physics Computer Science Applications Education
Zdroj:	Journal of Physics: Conference Series. 2094:022006
ISSN:	1742-6596 1742-6588
DOI:	10.1088/1742-6596/2094/2/022006
Popis:	The effect of low-energy proton irradiation on the pulse characteristics of siliconn+-p-p+structures is analyzed. It is shown that irradiation with protons with an energy of 180 keV and a dose of 1015cm−2creates a region with an effective lifetime of 5.5·10−8s in the space charge region of then+-pjunction. Such elements can be used to create high-speed photodiodes with an operating modulation frequency of 18 MHz.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8d8409a39cf8cab422c9b1245c99302b https://doi.org/10.1088/1742-6596/2094/2/022006 Zobrazit plný text záznamu