Setting up a Device Model for Rb-Conditioned Chalcopyrite Solar Cells
| Autor: | Tim Kodalle, Christian A. Kaufmann, Rutger Schlatmann, Hasan A. Yetkin, Tobias Bertram |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Passivation Chalcopyrite chemistry.chemical_element 02 engineering and technology Zinc 021001 nanoscience & nanotechnology 01 natural sciences Molecular physics Sample (graphics) Capacitance chemistry visual_art 0103 physical sciences visual_art.visual_art_medium 0210 nano-technology |
| Zdroj: | 2020 47th IEEE Photovoltaic Specialists Conference (PVSC). |
| Popis: | A comprehensive device model based on SCAPS-1D simulations is presented that reproduces the experimentally determined current-voltage and capacitance-voltage characteristics of a Rb-free reference, a sample that underwent an RbF-treatment, and a sample based on a CIGSe/RbInSe 2 -stack. According to this model, and in agreement with experimental findings, the main consequences of both Rb-conditionings are an increased doping-density and a defect passivation in the CIGSe as well as the formation of a photocurrent-barrier at the hetero-interface. With the numerical model established, fundamental aspects of the Rb-conditioning, as e.g. the differentiation between its effect on bulk and interface recombination are discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|