Silicon-germanium interdiffusion in high-germanium-content epitaxial heterostructures

Autor:	Paul C. McIntyre, Nevran Ozguven
Rok vydání:	2008
Předmět:	Materials science Physics and Astronomy (miscellaneous) Dopant Condensed matter physics Superlattice Alloy Enthalpy chemistry.chemical_element Heterojunction Germanium engineering.material Epitaxy Silicon-germanium Crystallography chemistry.chemical_compound chemistry engineering
Zdroj:	Applied Physics Letters. 92:181907
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.2917798
Popis:	We report on multilayer x-ray reflectivity measurements of the Si–Ge interdiffusivity in epitaxial SixGe1−x∕SiyGe1−y superlattices that have an average Ge composition of 91at.%. The extracted activation enthalpy (3.20±0.2eV) is substantially smaller than that previously reported for Si-rich SiGe alloys and the interdiffusivity value at typical dopant anneal temperatures is, therefore, much larger for the Ge-rich heterostructures. The activation enthalpy for interdiffusion measured for the ⟨XGe⟩=0.91 superlattice is reasonably consistent with a linear interpolation between the recently reported value for an alloy with ⟨XGe⟩≈0.5 and that reported for self-diffusion in pure Ge.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8d81d868cb0c6850752d24276d064a9e https://doi.org/10.1063/1.2917798 Zobrazit plný text záznamu