| Popis: |
We present the results of a three-dimensional, self-consistent ballistic quantum mechanical simulation of an indium arsenide (InAs) quantum wire metal oxide semiconductor field effect transistor (MOSFET) with channel lengths of approximately 10 nm. We find that these devices exhibit exceptional Ion/Ioff ratio, reasonable subthreshold swing and reduced threshold voltage variation. Finally, we compare the performance of the 10 nm InAs tri-gate device to a similar silicon device. We find that, when a suitable gate material is chosen, the InAs devices perform comparably to silicon devices in the ballistic limit. |
