A physical model for planar spiral inductors on silicon
| Autor: | J. Lau, Chik Patrick Yue, Changsup Ryu, Thomas H. Lee, S. Simon Wong |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Engineering
Silicon business.industry Process (computing) Physics::Optics chemistry.chemical_element Mechanical engineering Hardware_PERFORMANCEANDRELIABILITY Integrated circuit design Physics::Classical Physics Inductor Computer Science::Other Planar spiral inductors chemistry Hardware_GENERAL Q factor Scalability Hardware_INTEGRATEDCIRCUITS Electronic engineering Equivalent circuit business |
| Zdroj: | International Electron Devices Meeting. Technical Digest. |
| DOI: | 10.1109/iedm.1996.553144 |
| Popis: | This paper presents a physical model for planar spiral inductors on silicon. The model has been confirmed with measured and published data of inductors having different geometric and process parameters. This model is scalable with inductor geometry, allowing designers to predict and optimize the quality factor. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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