Electrical conductivity of undoped and rare-earth-doped high-resistivity GaSe crystals
Autor: | Sh. A. Allakhverdiev, A. Sh. Abdinov, R. F. Babaeva, R. M. Rzaev |
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Rok vydání: | 2009 |
Předmět: | |
Zdroj: | Inorganic Materials. 45:723-727 |
ISSN: | 1608-3172 0020-1685 |
DOI: | 10.1134/s0020168509070036 |
Popis: | The time-dependent conductivity of nominally undoped and rare-earth-doped (N R≃10−5 to 10−1 at % Gd, Dy, or Ho) high-resistivity gallium selenide crystals has been measured under various conditions. At a relatively low applied voltage and T ≤ 150 K, the conductivity of the crystals reaches a steady-state value rather slowly. When a voltage above a certain threshold is applied for a long time at T ≤ 300 K, the material exhibits electric fatigue. An energy-band model is proposed which provides qualitative explanation of the results. |
Databáze: | OpenAIRE |
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