Evolution of Superluminescence Spectra of Indium Arsenide under Intense Photoexcitation
| Autor: | E. Shatkovskis |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Amplified spontaneous emission
Photoluminescence Condensed Matter Physics Spectral line Electronic Optical and Magnetic Materials Photoexcitation Condensed Matter::Materials Science chemistry.chemical_compound chemistry Radiative transfer Atomic physics Indium arsenide Nuclear Experiment Excitation Power density |
| Zdroj: | physica status solidi (b). 213:189-195 |
| ISSN: | 1521-3951 0370-1972 |
| DOI: | 10.1002/(sici)1521-3951(199905)213:1<189::aid-pssb189>3.0.co;2-2 |
| Popis: | The photoluminescence of n-type indium arsenide was investigated under excitation by neodymium laser pulse radiation at the temperature of 100 K. Superluminescence by interband radiative transitions was observed. A rapid shift of the superluminescence peak position from 412 to 406 meV was found when the excitation power density increased from 0.1 to 1 MW/cm 2 . It is shown that the shift is caused by a change of the radiation transition character from transitions between conduction and light-hole bands to transitions between conduction band and heavy-hole band. The energy difference of 6 meV between the light-hole band extrema and heavy-hole band extrema in indium arsenide was determined for the first time by direct spectroscopic measurements. |
| Databáze: | OpenAIRE |
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