Atomic Layer Epitaxy of AlAs and (AlAs)n(GaAs)n Superlattices Using Dimethylaluminumhydride as the Al Source

Autor:	Mamoru Ishizaki, Nobuo Kano, Hiroshi Kukimoto, Junji Yoshino
Rok vydání:	1991
Předmět:	Diffraction chemistry.chemical_classification Chemistry Superlattice General Engineering Analytical chemistry General Physics and Astronomy Mineralogy Crystal growth Epitaxy X-ray crystallography Atomic layer epitaxy Thin film Inorganic compound
Zdroj:	Japanese Journal of Applied Physics. 30:L435
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.30.l435
Popis:	Atomic layer epitaxy (ALE) of AlAs has been achieved by using nominally pure dimethylaluminumhydride as the Al source, instead of its mixing with trimethylaluminum which was used in our previous ALE growth of ALE. Short period superlattices of (AlAs) n (GaAs) n with n=3, 5 and 10 have been fabricated at 470°C entirely by ALE, for the first time. The periodicity observed by X-ray diffraction measurements was as designed for these superlattices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8d651a3ea717c50d311ae88e789d2685 https://doi.org/10.1143/jjap.30.l435 Zobrazit plný text záznamu