(Invited) GeSn Technology: Impact of Sn on Ge CMOS Applications

Autor:	Roger Loo, Kristiaan Temst, M. Adachi, Shigeaki Zaima, Jelle Demeulemeester, Marika Nakamura, T. Clarysse, Federica Gencarelli, Osamu Nakatsuka, Shotaro Takeuchi, Matty Caymax, André Vantomme, Yosuke Shimura, Benjamin Vincent
Rok vydání:	2011
Předmět:	Materials science CMOS business.industry Optoelectronics business Engineering physics Technology impact
Zdroj:	ECS Transactions. 41:231-238
ISSN:	1938-6737 1938-5862
Popis:	In this paper, we reports our recent studies of the electrical and crystalline properties of heteroepitaxial Ge1-xSnx layers with various Sn content of 0~25%. We examined Ga-doping in strained Ge1-xSnx layers for developing source/drain stressor in CMOS applications and investigated the effect of Sn on the doping profile. The impact of Sn on carrier properties has been also studied with the Hall measurement of Ge1-xSnx/SOI structures. Also, we achieved the epitaxial growth of Ge1-xSnx layers with a Sn content as high as 25% on InP considering misfit between the epitaxial layer and substrate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8d4e6cfec3bc5a8f129976c83258173a https://doi.org/10.1149/1.3633303 Zobrazit plný text záznamu