X-ray Diffraction Tomography Using Laboratory Sources for Studying Single Dislocations in a Low Absorbing Silicon Single Crystal
| Autor: | I. G. Dyachkova, Victor E. Asadchikov, D. A. Zolotov, E. V. Suvorov, Alexey Buzmakov, Yu. S. Krivonosov, F. N. Chukhovskii |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry chemistry.chemical_element Synchrotron radiation Condensed Matter Physics 01 natural sciences 010309 optics Optics chemistry 0103 physical sciences X-ray crystallography Tomography Electrical and Electronic Engineering Photonics Dislocation business Instrumentation Single crystal Diffractometer |
| Zdroj: | Optoelectronics, Instrumentation and Data Processing. 55:126-132 |
| ISSN: | 1934-7944 8756-6990 |
| Popis: | This paper is a continuation of previous studies on the development of X-ray topo-tomography using laboratory equipment. The results on the spatial location of a single polygonal dislocation half-loop in a silicon single crystal were obtained as a result of testing the sensitivity of the X-ray topo-tomo diffractometer. A comparison was made with high-resolution experimental data obtained at the European synchrotron radiation facility (ESRF). The experimental procedure, software, and hardware for 3D reconstruction of the investigated single defect — a polygonal dislocation half-loop — are described. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink