A 10 μm GaAs/AlxGa1−xAs intersubband photodetector operating at zero bias voltage

Autor:	Peter Koidl, K. Schwarz, Harald Schneider, C. Schönbein, G. Bihlmann
Rok vydání:	1996
Předmět:	X-ray absorption spectroscopy Materials science Physics and Astronomy (miscellaneous) business.industry Infrared Bandwidth (signal processing) Photodetector Photovoltaic effect Optics Optoelectronics Zero bias business Quantum well Voltage
Zdroj:	Applied Physics Letters. 68:973-975
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.116116
Popis:	We report on a GaAs/AlxGa1−xAs quantum well intersubband photodetector for the long wavelength infrared region, which operates at zero bias voltage. Detection without bias is achieved by using an asymmetrical barrier structure as well as modulation doping, giving rise to a built‐in field across the barrier layers. The maximum of the spectral response is centered at 10 μm with a spectral bandwidth of 1.6 μm and a 77 K peak detectivity of 2.5×109 cm√Hz/W at 0 V.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8d2fb5325fb3cdf9501074b37a0fc395 https://doi.org/10.1063/1.116116 Zobrazit plný text záznamu