Investigation of Strongly Hydrophobic and Thick Porous Silicon Stain Films Properties
| Autor: | Chafiaa Yaddadene, Malika Berouaken, Maha Ayat, Mohamed Kechouane, Noureddine Gabouze, Katia Ayouz, Luca Boarino |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Silicon Scanning electron microscope chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Microstructure Porous silicon 01 natural sciences Isotropic etching Vanadium oxide Electronic Optical and Magnetic Materials Contact angle Chemical engineering chemistry 0103 physical sciences Fourier transform infrared spectroscopy 0210 nano-technology |
| Zdroj: | Silicon. 11:2669-2674 |
| ISSN: | 1876-9918 1876-990X |
| DOI: | 10.1007/s12633-018-0055-2 |
| Popis: | Porous silicon (PSi) structures with strong hydrophobicity have been achieved by chemical etching of p-type silicon substrates in a solution based on hydrofluoric acid solution (HF) and vanadium oxide (V2O5). The surface morphology and microstructure of the elaborated structured silicon surfaces were investigated using Scanning Electron Microscope (SEM), contact angle and Fourier Transform Infrared spectroscopy (FTIR). The results show that the obtained structures exhibit hierarchically porous surfaces with porous pillars of silicon (PPSi) and an important hydrophobicity of the surface. The electrical properties of those PPSi structures were investigated in presence of 10 ppm of NO2 gas. The response time was about 30s at room temperature. Our results demonstrate that PPSi/Si are highly hydrophobic for long time and suitable for applications in the field of self-cleaning and may be a good candidate in elaborating practical NO2 sensors. |
| Databáze: | OpenAIRE |
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