4H-SiC power devices for use in power electronic motor control
| Autor: | C.D. Brandt, David C. Sheridan, M.F MacMillan, Larry B. Rowland, Anant K. Agarwal, Jeffrey B. Casady, R.R. Siergiej, Phillip Albert Sanger, S. Seshadri |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
Emitter turn off thyristor business.industry Direct current Electrical engineering Thyristor Condensed Matter Physics Electronic Optical and Magnetic Materials Integrated gate-commutated thyristor chemistry.chemical_compound chemistry Power module Materials Chemistry Silicon carbide Optoelectronics Power semiconductor device Electrical and Electronic Engineering business Diode |
| Zdroj: | Solid-State Electronics. 42:2165-2176 |
| ISSN: | 0038-1101 |
| Popis: | Silicon carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices. This paper presents an overview of SiC power devices and concludes that the MOS turn-off thyristor (MTO™), comprising of a hybrid connection of SiC gate turn-off thyristor (GTO) and MOSFET, is one of the most promising near term SiC switching device given its high power potential, ease of turn-off, 500°C operation and resulting reduction in cooling requirements. The use of a SiC and an anti-parallel diode are primary active components which can then be used to construct an inverter module for high-temperature, high-power direct current (d.c.) motor control. |
| Databáze: | OpenAIRE |
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