Study of thermal effects and self-heating phenomena in planar power SOI MOS transistors
| Autor: | Yu. A. Chaplygin, Evgenia A. Artamonova, A. Yu. Krasyukov, T. Yu. Krupkina |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Heterostructure-emitter bipolar transistor business.industry Transistor Multiple-emitter transistor Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Power (physics) law.invention Planar law Thermal Hardware_INTEGRATEDCIRCUITS Optoelectronics business Self heating Hardware_LOGICDESIGN |
| Zdroj: | Semiconductors. 42:1522-1526 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782608130150 |
| Popis: | Heat removal problems, thermal effects, and self-heating phenomena occurring during operation of planar power SOI MOS transistors are considered. Using device-technological simulating methods, the transistor characteristics and safe operation range were studied. It was shown that limitations of the safe operation range are mostly associated with structure self-heating rather than with the parasitic bipolar transistor. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|