Effect of total hydrogen content in silicon nitride sensitive film on performance of ISFET
| Autor: | Lang-Xing Chen, Guo-Hua Li, Ke-Ming Chen, Huiyun Lu |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Hydrogen
Metals and Alloys Analytical chemistry Infrared spectroscopy chemistry.chemical_element Chemical vapor deposition Condensed Matter Physics Oxygen Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Silicon nitride chemistry Chemical bond Materials Chemistry Electrical and Electronic Engineering ISFET Instrumentation Deposition (law) |
| Zdroj: | Sensors and Actuators B: Chemical. 12:23-27 |
| ISSN: | 0925-4005 |
| Popis: | Quantitative determinations of the hydrogen content and its profile in silicon nitride sensitive films by the method of resonant nuclear reaction have been carried out. At a deposition temperature of 825-degrees-C, hydrogen exists in an LPCVD silicon nitride sensitive film and the hydrogen content on its surface is in the range (8-16) x 10(21) cm-3, depending on the different deposition processes used. This hydrogen content is larger than the (2-3) x 10(21) cm-3 in its interior part, which is homogeneous. Meanwhile, we observe separate peaks for the chemical bonding configurations of Si-H and N-H bonds, indicated by the infrared absorption bands Si-O (1106 cm-1), N-H (1200 cm-1), Si-H-3 (2258 cm-1) and N-H-2 (3349 cm-1), respectively. The worse linear range of the ISFET is caused by the presence of oxygen on the surface of the silicon nitride sensitive film. The existence of chemical bonding configurations of Si-H, N-H and N-Si on its surfaces is favourable for its pH response. |
| Databáze: | OpenAIRE |
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