Al0.65Ga0.35N channel high electron mobility transistors on AlN/ sapphire templates
| Autor: | Asif Khan, Seongmo Hwang, Antwon Coleman, Sakib Muhtadi, Fatima Asif |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
business.industry 020208 electrical & electronic engineering Transistor Doping Electrical engineering Gallium nitride 02 engineering and technology High-electron-mobility transistor 021001 nanoscience & nanotechnology law.invention Barrier layer chemistry.chemical_compound chemistry law 0202 electrical engineering electronic engineering information engineering Sapphire Optoelectronics 0210 nano-technology business Sheet resistance Order of magnitude |
| Zdroj: | 2017 75th Annual Device Research Conference (DRC). |
| DOI: | 10.1109/drc.2017.7999444 |
| Popis: | We report on an Al 0 85 Ga 0.15 N-Al 0 65 Ga 0 35 N high electron mobility transistor (HEMT) on low-defect AlN buffers over basal plane sapphire substrates. A new epilayer design consisting of a doped barrier layer yielded sheet resistivity values as low as 1800 Ω per square. Devices with a source-drain spacing of 5.5 μm and a gate length of 1.8 μm exhibited peak drain-currents as high as 290 mA/mm at a gate bias of +4 volts. This is at least an order of magnitude higher than previous reports. We also show that 3μm thick low-defect AlN buffer layers provide enough thermal conduction enabling stable device operation over 250oC. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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