Doping of GaAs using SF6plasma treatment

Autor:	Naresh C. Saha, Jaeshin Cho
Rok vydání:	1993
Předmět:	Auger electron spectroscopy Materials science Annealing (metallurgy) Doping Analytical chemistry nutritional and metabolic diseases General Physics and Astronomy Sulfur hexafluoride chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Silicon nitride Ohmic contact Sheet resistance
Zdroj:	Journal of Applied Physics. 74:7315-7320
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.354998
Popis:	We propose a new method of making heavily doped n‐type GaAs to a very shallow depth using sulfur hexafluoride (SF6) plasma treatment of the GaAs surface. Semi‐insulating GaAs substrate implanted with Si was exposed to a sulfur containing SF6 plasma and capped with silicon nitride anneal cap. During a subsequent anneal step at an elevated temperature to electrically activate the implanted Si, the sulfur diffused into GaAs to a shallow depth of ∼600 A resulting in further enhancement of net carrier concentration. With this technique the carrier concentration near the surface region was almost doubled compared to samples with Si implantation only. The enhanced carrier concentration improved the wafer‐scale variation of ohmic contact resistance using AuGeNi contact metals from 0.089±0.073 to 0.049±0.017 Ω mm. The surface chemistry of SF6 plasma treated GaAs surface was characterized by x‐ray photoelectron spectroscopy and Auger electron spectroscopy, and the results were compared with the carrier‐concentratio...
Databáze:	OpenAIRE
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