Charge Transport and Observation of Persistent Photoconductivity in Tl6SeI4 Single Crystals
| Autor: | Svetlana S. Kostina, Joon-Il Kim, Wenwen Lin, Pice Chen, John A. Peters, Bruce W. Wessels, Sanjib Das, Mercouri G. Kanatzidis |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Quenching Range (particle radiation) Materials science Band gap business.industry 02 engineering and technology Atmospheric temperature range 021001 nanoscience & nanotechnology 01 natural sciences Molecular physics Semiconductor Electrical resistivity and conductivity Impurity 0103 physical sciences General Materials Science Atomic number Physical and Theoretical Chemistry Atomic physics 0210 nano-technology business |
| Zdroj: | The Journal of Physical Chemistry Letters. 8:1538-1544 |
| ISSN: | 1948-7185 |
| DOI: | 10.1021/acs.jpclett.7b00336 |
| Popis: | The chalcohalide compound Tl6SeI4 is a promising wide-bandgap semiconductor for efficient hard radiation detection at room temperature due to its high density, average atomic number and mobility-lifetime product. However, the nature of its charge transport kinetics, especially the role of defects in recombination, has not been examined in detail. To determine the charge transport kinetics in Tl6SeI4 single crystals, electrical conductivity and photoinduced current transient spectroscopy were measured over the temperature range 105–330 K. These measurements reveal the existence of multiple defect states with energy levels in the range 0.10–0.90 eV, within the bandgap of Tl6SeI4. Large persistent photoconductivity (PPC) is observed at low temperature that shows strong thermal quenching at 160 K. The quenching of PPC is described using a configuration coordinate model involving a deep level donor state, which is tentatively attributed to the presence of iodine vacancies or Si interstitial impurities. |
| Databáze: | OpenAIRE |
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