| Autor: |
Anirudhha Ghosal, Jayabrata Goswami, Janmajoy Banerjee, Anuva Ganguly |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
Lecture Notes in Electrical Engineering ISBN: 9789811649462 |
| Popis: |
The modeling and analysis of an n-type InAs-based tunnel field-effect transistor (TFET) have been carried out by using parabolic approximation technique. The basic parameters of the device have been outlined by shifting the channel length, keeping gate oxide thickness constant to achieve high ON to OFF current ratio (Ion/Ioff) and low subthreshold swing (SS). The surface potential, device electric field and ON state or drain current are obtained from the analytical solution of 2D Poisson’s condition subject to suitable boundary conditions by utilizing finite difference method (FDM). |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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