Simulation of forward bias injection in proton irradiated silicon pn-junctions
| Autor: | Anders Hallén, Jörgen Olsson, Niklas Keskitalo, Ference Masszi |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
Silicon Proton Physics::Instrumentation and Detectors business.industry chemistry.chemical_element Mechanical engineering Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Materials Chemistry Optoelectronics Charge carrier Irradiation Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 39:1087-1092 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(95)00417-3 |
| Popis: | A multilevel recombination model is implemented in the simulation program MEDICI to simulate proton irradiated silicon. First the model is used to simulate charge carrier distributions in proton irradiated silicon p(+)n-diodes in order to evaluate deep le |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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