| Autor: |
Eric R. Motto, Thomas Radke, Toru Matsuoka, John F. Donlon, Marco Honsberg |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
2011 IEEE Energy Conversion Congress and Exposition. |
| DOI: |
10.1109/ecce.2011.6064333 |
| Popis: |
The latest 6th generation Carrier Stored Trench Gate Bipolar Transistor (CSTBT™) provides state of the art optimization of conduction and switching losses in IGBT modules. Use of low values of resistance in series with the IGBT gate produces low turn-on losses but increases stress on the recovery of the free-wheel diode resulting in higher dv/dt and increased EMI. The latest modules also incorporate new, improved recovery free-wheel diode chips which improve this situation but detailed evaluation of the trade-off between turn-on loss and dv/dt performance is required. This paper describes the evaluation, test results, and a comparative analysis of dv/dt versus turn-on loss as a function of gate drive conditions for the 6th generation IGBT compared to the standard 5th generation module. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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