Valence band structure of rubrene single crystals in contact with an organic gate dielectric
| Autor: | Hisao Ishii, Antje Vollmer, Norbert Koch, Jens Niederhausen, Hiroumi Kinjo, Jürgen P. Rabe, Shin'ichi Machida, Yasuo Nakayama, Yuki Uragami |
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| Rok vydání: | 2013 |
| Předmět: |
Organic electronics
Organic field-effect transistor Condensed matter physics Intrinsic semiconductor Chemistry Band gap Analytical chemistry General Chemistry Condensed Matter Physics Electronic Optical and Magnetic Materials Biomaterials Organic semiconductor Condensed Matter::Materials Science chemistry.chemical_compound Materials Chemistry Charge carrier Electrical and Electronic Engineering Electronic band structure Rubrene |
| Zdroj: | Organic Electronics. 14:1825-1832 |
| ISSN: | 1566-1199 |
| DOI: | 10.1016/j.orgel.2013.04.019 |
| Popis: | Organic field effect transistors (OFETs) using crystalline organic semiconductors are of great interest because of their well-defined structural and electronic properties to study the intrinsic charge carrier transport mechanisms in π-conjugated molecular solids, as well as to unravel their potential to be applied as a novel type of electronic device. In the present study, the valence band structure of the channel region of an OFET is proposed based on photoemission results of a well-defined interface between a dielectric molecular monolayer and single crystals of 5,6,11,12-tetraphenyltetracene (rubrene) which is known to exhibit the highest field effect mobility of all organic semiconductors at room temperature. Commensurate growth of clusters of tetratetracontane (TTC; n-C44H90) on the rubrene single crystal surface and their morphological transformation into a uniform overlayer were observed by atomic force microscopy. Photoelectron spectroscopy measurements at various electron take-off angles were then conducted to derive the valance band width of the rubrene single crystal covered by the TTC overlayers. The valence band width at this hetero-interface was found to be equivalent to that of the pristine rubrene, which suggests an unchanged ‘band effective mass ħ2(d2E/dk||2)’ of accumulated holes even at the vicinity of hydrocarbon-based gate dielectrics. |
| Databáze: | OpenAIRE |
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