Analysis of iodine incorporation in mbe grown CdTe and HgCdTe
| Autor: | Christopher J. Summers, S. D. Pearson, A. Parikh, Brent K. Wagner |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Surface diffusion
Materials science Solid-state physics Dopant Diffusion Analytical chemistry chemistry.chemical_element Condensed Matter Physics Thermal diffusivity Iodine Cadmium telluride photovoltaics Electronic Optical and Magnetic Materials chemistry Materials Chemistry Growth rate Electrical and Electronic Engineering |
| Zdroj: | Journal of Electronic Materials. 26:1065-1069 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-997-0245-y |
| Popis: | A study is reported of the dynamics of dopant incorporation in iodine doped CdTe. Using a mathematical formulation, the iodine doping profiles in CdTe and HgCdTe have been fitted to experiment to obtain material parameters such as the bulk and surface diffusion and the segregation energy. Dopant profile fitting showed that iodine diffusion was insignificant and gave an iodine segregation energy of 0.6 eV and a surface diffusivity enhancement factor of 300 at a growth temperature of 230°C. The model was used to determine the effect of the growth rate and temperature for particular growth conditions. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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