Properties of S Implanted in GaAs Activated Using As-Doped a-Si:H Encapsulant Films

Autor:	Hiromichi Takano, Katsuhiro Yokota, Masanori Sakaguchi, Masao Kumagai, Kiyohito Hirai, Akira Shiomi
Rok vydání:	1996
Předmět:	Materials science Silicon Annealing (metallurgy) Doping General Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element Mineralogy Thermal diffusivity Ion Ion implantation chemistry Impurity Wafer
Zdroj:	Japanese Journal of Applied Physics. 35:4203
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.35.4203
Popis:	Implantation of S+ ions into GaAs was performed under the conditions of energy of 120 keV and doses of 3×1013–1×1015 cm-2. The GaAs was capped with an 80 nm thick a-Si:H film into which As was doped at a concentration of 2×1020 cm-3. Then, the samples were annealed in Ar gas at 850–1000°C for 15 min. The As-doped a-Si:H film did not crack even after it was heated to a high temperature such as 1000°C. The sheet carrier concentrations were approximately proportional to the square root of the implantation dose. The diffusivity of S can be represented by the equation D e=D 1 [ K'Q 2/(1 + K'Q 2 )] , where K' is a constant,Q is the implantation dose, and D 1 is the diffusivity of a mobile complex.
Databáze:	OpenAIRE
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