Transformation from β-Ga 2 O 3 to GaN Nanowires via Nitridation

Autor:	Song Yi-Pu, YU Da-Peng, Xu Jun, Wang Peng-Weio, Zhang Xin-Zheng
Rok vydání:	2008
Předmět:	Materials science business.industry Band gap Doping Nanowire General Physics and Astronomy Acceptor symbols.namesake Semiconductor Transmission electron microscopy symbols Optoelectronics business Raman spectroscopy Wurtzite crystal structure
Zdroj:	Chinese Physics Letters. 25:1038-1041
ISSN:	1741-3540 0256-307X
DOI:	10.1088/0256-307x/25/3/063
Popis:	Element doping is an important way to modify the properties of semiconductor materials. In our previous work, it was found that nitrogen-doping in β-Ga2O3 nanowires can induce a novel luminescence emission (around 740 nm) caused by generation of acceptor levels at the middle of the band gap of the β-Ga2O3 nanowires. Here we report that further heavy doping of nitrogen can transform the β-Ga2O3 nanowires completely into wurtzite structured GaN nanowires. Transmission electron microscopy (TEM), x-ray diffraction (XRD) and Raman spectrum are used to evaluate the transition process. Both XRD and Raman analysis reveal that the monoclinic β-Ga2O3 nanowires start phase transformation at a temperature around 850°C towards wurtzite structured GaN. Our results will be very helpful to profound our understanding of the doping induced effects and phase transformation in semiconductor compounds.
Databáze:	OpenAIRE
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