Low Temperature Silicon Wafer‐to‐Wafer Bonding with Nickel Silicide
| Autor: | Wenru Chen, Guobing Zhang, Guo‐Ying Wu, Yilong Hao, Zhixiong Xiao, Zhi‐Hong Li, Yangyuan Wang |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Auger electron spectroscopy
Materials science Silicon Renewable Energy Sustainability and the Environment Wafer bonding Annealing (metallurgy) Scanning electron microscope Metallurgy Ultrasonic testing chemistry.chemical_element Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Ultimate tensile strength Materials Chemistry Electrochemistry Wafer Composite material |
| Zdroj: | Journal of The Electrochemical Society. 145:1360-1362 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.1838466 |
| Popis: | A new low temperature silicon wafter-to-wafer bonding with nickel silicide at an annealing temperature of 440°C is presented. Good adhesion between the wafers has been achieved as measured by tensile strength testing, and observed by scanning electron microscopy. The bonding area percentage, measured by ultrasonic testing, is larger than 90%. The nickel silicide formed at the interface is NiSi, as observed by X-ray diffraction and Auger electron spectroscopy. The bonded pairs show good contact characteristics. |
| Databáze: | OpenAIRE |
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