| Popis: |
Electrophotographic spectroscopy, low-frequency capacity and photoconductivity methods were applied to investigate density of the located states in a mobility band of amorphous semiconductors layers AS 2 S 3 ? As 2 Se 3 . Quasicontinous and strictly localized states of donor and acceptor types are found. The explanation of this is offered on the basis of existence of metastable states, which are created under light, X-Ray and electron excitation. On the basis of the mentioned materials barriers structures are created and elaborated devices for record and reading of optical information in them. |
