Electronic Properties of Nano- and SubmicronSemiconductor Particle Layers
| Autor: | Zhukov, N.D., Shishkin, M.I., Yagudin, I.T., Khazanov, A.A., Gavrikov, M.V. |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
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| DOI: | 10.34986/makao.2020.95.51.005 |
| Popis: | Studying multigrain layers (MGL) formed by nanoparticles of Si, GaAs, InAs, InSb semiconductors and CdSe and PbS colloidal quan-tum dots (CQDs) reveals that the current-voltage curves for InAs, GaAs and Si MGL and PbS CQDs are determined by nanoparticles’ tunneling from near-surface electron states. In the case of Si tunneling is replaced by thermionic emission when the temperature and voltage increase. For the CdSe CQD MGL the current-voltage curve is almost linear. Evalua-tion of the current-voltage curves with gradual to-and-fro voltage alter-ation revealed a hysteresis-type effect which can be attributed to the intergranular electron charge exchange. The PbS QD photoconductivity range was found to contain dark current suppression with maximum values within the wavelength range of 1600–2500 nm, which can be caused by impurity electron levels related to oxygen. Such effects, in-dicative of photomemory occuring due to charge-carrier injection into MGL, can be utilized in photoluminescent or electroluminescent LEDs. Elaboration of CdSe and PbS nanoparticle self-arrangement mechanism enabled us to design a light source with multichannel element radiation spectrum control, which can be used for non-invasive biomedical quick testing. Multigrain structures are expected to be used in making such optoelectronic devices as solar cells and memory cells. Scientific research and Innovation, Выпуск 1 (1) 2020 |
| Databáze: | OpenAIRE |
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