Highly scalable and manufacturable heterogeneous charge trap NAND technology

Autor:	J. Neo, S. Ortiz, T. Fang, D. Matsumoto, F. Tsai, Unsoon Kim, James Pak, S. Bell, Y. Sun, G. Nagatani, Timothy Thurgate, Sameer Haddad, M. Janai, Inkuk Kang, S. Shetty, P.K. Singh, Calvin Gabriel, Rinji Sugino, A. Samqui, S. Tehrani, Mark T. Ramsbey, Kuo-Tung Chang, Chun Chen, Shenqing Fang, Angela Hui
Rok vydání:	2013
Předmět:	business.industry Computer science NAND gate Nitride Circuit reliability Design for manufacturability Trap (computing) Hardware_GENERAL Charge trap flash Scalability Electronic engineering Optoelectronics Node (circuits) business
Zdroj:	2013 5th IEEE International Memory Workshop.
Popis:	For the first time, we will present production-ready heterogeneous charge trap NAND technology based on Silicon Rich Nitride. The competitive product performance, reliability, and manufacturability demonstrated at the 43nm node, in conjunction with the planar cell architecture have laid the foundation for scaling to
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8ccb148132b4072237f0c8f50f141f8e https://doi.org/10.1109/imw.2013.6582098 Zobrazit plný text záznamu