65.2: Spin-On Polymers for TFT Gate Dielectric Application and Planarization of Stainless Steel

Autor:	Ahila Krishnamoorthy, Mehari Stifanos, Wenya Fan, Jinghong Chen, Jeff Rose, Brian J. Daniels, Jan Nedbal, Emma Brouk, Peter Smith
Rok vydání:	2006
Předmět:	chemistry.chemical_classification Materials science business.industry Gate dielectric Polymer Dielectric chemistry Flexible display Thin-film transistor Chemical-mechanical planarization Electronic engineering Breakdown voltage Optoelectronics business Curing (chemistry)
Zdroj:	SID Symposium Digest of Technical Papers. 37:1878
ISSN:	0097-966X
DOI:	10.1889/1.2433412
Popis:	We present spin-on polymer films with significantly improved dielectric properties for TFT gate dielectric applications. Breakdown voltage//leakage current//CV hysteresis are 4.10 MV/cm at 1 μA/cm2//4.9 × 10−8 A/cm2 at 2.5 MV/cm//3.4 V and 4.73 MV/cm//2.6 × 10−8 A/cm2//0.44V at curing temperatures of 250 °C and 425 °C, respectively. In addition, we present our recent results using spin-on dielectrics to planarize and insulate stainless steel substrates for flexible displays and high resolution QVGA mobile displays.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8cc69fd11e17e4e17c2b2ec0a2135997 https://doi.org/10.1889/1.2433412 Zobrazit plný text záznamu Plný text